SHIN RESEARCH GROUP

Semiconductor Nanomaterials Laboratory

at INHA university

 
 

RESEARCH

We are interested in fabricating and engineering nanostructures of semiconducting materials to pioneer their new physical properties. Rational design and robust control of semiconductor nanostructures are generally desired to augment the material properties for device applications. We employ bottom-up approaches using vapor-based growth methods (CVD, VLS, etc) to synthesize 1D or 2D nanostructures.

We ultimately aim to fabricate the new class of semiconducting material system (e.g., heterojunctions or superstructures) for various future applications including energy conversion, display, sensing, etc.

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UNDERSTANDING 2D SEMICONDUCTING CRYSTAL GROWTH DURING CVD PROCESS

2D monolayer transition metal dichalcogenides (TMDs) is an attractive system for flexible/transparent optoelectronic applications owing to its direct band gap structure.
Fabrication of large-area single crystal with minimized defect is essential, which necessitates the fundamental understanding of nucleation process. We systemically study the role of hydrogen on the controlled nucleation during the CVD growth of 2D TMDs to understand the fundamental aspects of large area crystal growth.

VLS Homoepitaxy of Lead Iodide Nanowires for Hybrid Perovskite Conversion

METAL HALIDE NANOWIRE GROWTH
FOR THE ORGANIC-INORGANIC HYBRID PEROVSKITES CONVERSION

Metal halide based organic-inorganic hybrid perovskites (OIHPs) is rapidly emerging as an active components in the photovoltaic and optoelectronic devices. Fabricated in low dimensional nanostrucutures with control, OIHPs exhibit superior optoelectronic properties compared to the bulk. We developed a new route to grow highly oriented metal halide nanowires and convert them into the OIHPs nanowires conserving original morphology. We expect these nanowires can serve as the general platform for the photonic or optoelectronic applications.

Perovskite Pattern Formation by Chemical Vapor Deposition Using Photolithographically Defined Templa

PEROVSKITES PATTERNING
BY TEMPLATED CHEMICAL VAPOR DEPOSITION

To maximize the potential of perovskite materials for optoelectronic application, it is desired to prepare them in "patterned" morphology. Conventional perovskite patterning processes have mainly relied on solution-based recrystallization and lithography using polar solvents detrimental to their properties. Our selective CVD growth using the pre-defined soft patterns on arbitrary substrates enables the patterning of OIHPs without quality degradation.